STP105

STP105N3LL MOSFET

• Low gate drive power losses

• VDS Drain-source voltage 30 V

• VGS Gate-source voltage ± 20 V

• ID Continuous drain current at TC = 25 °C(silicon limited) 150 A

• ID Continuous drain current at TC = 100 °C(silicon limited) 105 A

• ID Continuous drain current at TC = 25 °C(package limited) 80 A

• PTOT Total dissipation at TC = 25 °C 140 W

• Single pulse avalanche energy 150 mJ

• Tstg Storage temperature -55 to 175 °C

• Tj Max. operating junction temperature 175 °C