This device is an N-channel Power MOSFET developed using the STripFETâ„¢ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Features :
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Packages TO-220
Applications :
- Switching applications
- Inverter & UPS
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