K80E08K3 36V-80A N Channel MOSFET

K80E08K3 Mosfet

•  E-Bike/UPS/Inverter
•  Low drain−source ON resistance  : RDS (ON)= 7.5 mΩ(typ.)
•  High forward transfer admittance  : |Yfs| = 135 S (typ.)
•  Low leakage current  : IDSS= 10 µA (max) (VDS= 75 V)
•  Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

•  Drain to source voltage : VDSS = 75 V
•  Gate to source voltage : VGSS = ± 20 V
•  Drain current : ID = 80 A
•  Drain power dissipation : Pd =  200 W
•  Avalanche energy : Ear = 20 mJ
•  Channel temperature : Tch =  175 °C
•  Storage temperature : Tstg = -55 to +175 °C

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