IRLB4132PbF MOSFET –
- ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)= 150A
- PD @TC = 25°C Maximum Power Dissipation= 140W
- BVDSS Drain-to-Source Breakdown Voltage= 30V
- VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V
- Manufacturer: Infineon
- Polarity: N-Channel
- New and Original.
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