FQP24N60C Mosfet
Original mosfet 24N60 having 24A 600V Ultra low gate charge, Periodic avalanche rated. This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on state resistance, and to provide superior switching performance and high avalanche energystrength. These devices are suitable for switched mode power supplies, active power factor correction, and electronic lamp ballasts
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