This device is an N-channel Power MOSFET developed using the STripFET H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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Specifications
- VDS Drain-source voltage: 30V
- Continuous drain current at TC = 150 A
- PTOT Total dissipation at TC = 140 W
- Max. operating junction temperature: 175 °C
- N Chanel Mosfet
- Best for 12v Inverter & UPS
- Switching applications
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