K2611S N-Channel enhancement mode power field effect transistors are produced using Winsemi’s proprietary, planar stripe ,DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. its have have refresh, fully tested, mosfet.
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 900V |
| Continuous Drain Current (Id) | 9A |
| Drain-Source Resistance (Rds On) | 1.1Ohms |
| Gate-Source Voltage (Vgs) | 30V |
| Gate Charge (Qg) | 58 nC |
| Operating Temperature Range | -55 – 150°C |
| Power Dissipation (Pd) | 150W |
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